r08ds0045ej0100 rev.1.00 page 1 of 7 mar 05, 2012 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. preliminary data sheet nv4v31mf blue-violet laser diode 405 nm blue-violet laser light source description the nv4v31mf is a blue-violet laser diode with a wavelength of 405 nm. a newly developed ld chip structure achieves a high optical power output of 175 mw (cw) at up to 85 c. the nv4v31mf can provide excellent linearity from low to high output at high temperatures, and reduces the unevenness of beam divergence. features ? high optical output power p o = 175 mw @cw ? peak emission wavelength p = 405 nm typ. ? wide operating temperature range t c = ? 5 to +85 c ? 3.8 mm small can package applications ? blue-violet laser light source r08ds0045ej0100 rev.1.00 mar 05, 2012
nv4v31mf chapter title r08ds0045ej0100 rev.1.00 page 2 of 7 mar 05, 2012 package dimensions (unit: mm) 0.25 0.07 0.25 0.07 0.8 0.05 1.2 with glass 3 (stem gnd) 2 1 ld 90 2 y x effective diameter 0.65 min. pin connections stem reference plain 1.30.08 *1 0.2 min. ld chip z 6.50.5 0.3 max. 1.00.1 2.020.08 3? 0.30.05 3.8 +0.0 ?0.025 2.420.1 3.1 max. 0.10.05 remarks 1. cap glass thickness: 0.250.03 mm cap glass refractive index :1.53 ( = 405 nm) bottom view 1 2 3 0.2 0.1 1.43 0.15 p.c.d. x = 80 m y = 80 m z = 80 m ( *1 ) 2. position accuracy of the ld chip based on the center of stem
nv4v31mf chapter title r08ds0045ej0100 rev.1.00 page 3 of 7 mar 05, 2012 ordering information part number order number rank package gv tray packaging (250 p/tray) nv4v31mf nv4v31mf-a kv individual packaging (for small samples) absolute maximum ratings (t c = 25 c, unless otherwise specified) parameter symbol ratings unit optical output power (cw) p o 180 mw optical output power (pulse) *1 p p 360 mw reverse voltage of ld v r 2 v operating case temperature t c ? 5 to +85 c storage temperature t stg ? 40 to +85 c note: *1. pulse condition: pw 50 ns, duty 50% recommended operating conditions (t c = 25 c, unless otherwise specified) parameter symbol max. unit optical output power (cw) p o 175 mw electro-optical characteristics (t c = 25 c, unless otherwise specified) parameter symbol conditions min. typ. max. unit threshold current i th cw 35 55 ma operating current i op cw, p o = 175 mw 150 200 ma optical voltage v op cw, p o = 175 mw 5.0 6.5 v slope efficiency d cw, p o = 20 mw, 175 mw 1.1 1.55 w/a peak wavelength p cw, p o = 175 mw 400 405 415 nm beam divergence (lateral) // cw, p o = 175 mw 6 9 12 deg. beam divergence (vertical) 15 20 25 position accuracy angle (lateral) ? // cw, p o = 175 mw ? 3 0 3 deg. position accuracy angle (vertical) ? ? 3 0 3
nv4v31mf chapter title r08ds0045ej0100 rev.1.00 page 4 of 7 mar 05, 2012 typical characteristics (t c = 25 c, unless otherwise specified) optical output power p o (mw) peak wavelength p (nm) temperature ( c) peak wavelength p (nm) optical output power vs. forward current forward current i f (ma) optical output power p o (mw) forward voltage vs. forward current forward current i f (ma) forward voltage v f (v) 400 0 50 100 150 200 410 408 406 404 402 power dependence of differential efficiency n = 5 0.011 nm/mw 400 0 20 40 60 80 100 412 410 408 406 404 402 temperature dependence of differential efficiency 0.064 nm/ c 175 mw n = 5 ? 30 ? 20 ? 10 0 10 20 30 ffp (lateral) angle (degrees) relative intensity 175 mw 120 mw 80 mw 40 mw ffp (vertical) angle (degrees) relative intensity ? 30 ? 20 ? 10 0 10 20 30 175 mw 120 mw 80 mw 40 mw 0 50 100 150 200 0 2 4 6 8 10 20 c 25 c 30 c 40 c 50 c 60 c 70 c 80 c 90 c 0 50 100 150 200 20 c 25 c 30 c 40 c 50 c 60 c 70 c 80 c 90 c 0 20 40 60 80 100 120 140 160 180 200 remark the graphs indicate nominal characteristics.
nv4v31mf chapter title r08ds0045ej0100 rev.1.00 page 5 of 7 mar 05, 2012 400 402 404 406 408 410 wavelength spectrum (100 mw) wavelength (nm) relative intensity 0 1.2 1 0.8 0.6 0.4 0.2 400 402 404 406 408 410 wavelength spectrum (175 mw) wavelength (nm) relative intensity 0 1.2 1 0.8 0.6 0.4 0.2 remark the graphs indicate nominal characteristics.
nv4v31mf chapter title r08ds0045ej0100 rev.1.00 page 6 of 7 mar 05, 2012 notes on handling (unit: mm) 1. recommended soldering conditions ? peak temperature 350 c or below ? time 3 seconds or less ? soldering of leads should be made at the point 2.0 mm from the root of the lead ? this device cannot be mounted using reflow soldering. 2. usage cautions (1) take the following steps to ensure that the device is not damaged by static electricity. ? wear an antistatic wrist strap when soldering the device. we recommend a strap with a 1 m resistor. ? make sure that the work table and soldering iron are grounded. ? make sure that the soldering iron does not leak. (2) do not subject the package to undue stress. the package has a tensile strength of 1n. do not exceed this rating. also, avoid be nding the leads as much as possible. if the leads must be bent, bend them only once, making sure to anchor the base of the lead. (3) do not allow the glass window of the package to become scratched or dirty. also, do not subject the glass window to external force. (4) be sure to attach a heat si nk to sufficiently dissipate heat. (5) use the device as soon as possible after opening the aluminum moisture barrier bag.
nv4v31mf chapter title r08ds0045ej0100 rev.1.00 page 7 of 7 mar 05, 2012 safety information on this product danger visible laser radiation avoid direct exposure to beam output power 450 mw max wavelength 400 to 420 nm class lllb laser product avoid exposure-visible laser radiation is emitted from this aperture semiconductor laser warning laser beam a laser beam is emitted from this diode during operation. if the laser beam or its reflection enters your eye, it may cause injury to the eye or loss of eyesight. (note that, depending on the wavelength of the be am, the laser beam might not be visible.) ? do not look directly into the laser beam. ? avoid exposure to the laser beam, any reflected or collimated beam.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history nv4v31mf data sheet description rev. date page summary 0.01 sep 08, 2011 ? first edition issued 1.00 mar 05, 2012 throughout prelimi nary data sheet -> data sheet p.3 modification of ordering information p.4, 5 addition of typical characteristics
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